Abstract ：

InGaAs-based laser diodes (LDs) are widely used for decades due to their high resistance to heat, high speeds, high output power and low threshold current. The width of multiple quantum well (MQW) is one of the most essential parameters that is directly linked to the characteristic of LDs. However, tuning the MQW width is a cumbersome task for fabrications. Therefore, this paper examines the effect of multiple quantum well width on the performance of InGaAs/InP-based laser diodes (LDs). The optical and electrical characteristics of laser diodes with varying quantum well widths are numerically analysed using Lumerical software. The results indicate that a 10-nm-wide MQW LD exhibits optimal performance within the 9 to 11 nm range, with a six-period quantum well structure, achieving the lowest threshold current. Additionally, the peak emission frequency is identified and discussed. The simulation results will assist engineers make the most appropriate decision when determining the MQW width for InGaAs-based LDs. © Published under licence by IOP Publishing Ltd.

Keyword ：

Peak frequency InGaAs/InP laser diodes Threshold current Multiple quantum well Emission spectrum

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Abstract ：

In this paper, the frequency responses of InP/InGaAs vertical-incidence p-i-n photodiodes with various optical apertures of 50–80 μm are investigated. The same resonant frequency (fR) of approximately 1.02 GHz was observed for all device apertures. There are two conditions that can lead to the resonance of the frequency response. Therefore, an equivalent circuit model and a carrier transport model were used to fit and analyze the resonance curve. We then found that the resonant circuit can produce frequency response oscillations, but the peak position occurs at a higher frequency and the radio-frequency response drops more rapidly, which does not match the measured curve. Therefore, we believe that carrier transport delay is the main cause of the resonance. Based on the energy bands of our detectors and comparison with a reference device, it was found that when the blocked holes at the InGaAsP/InGaAs heterojunction interface tunnel through the potential barrier, a resonant frequency could be induced. Using our material structure and tunneling model, the tunneling frequency of the holes was calculated to be 0.99 GHz, which matched the measured resonant frequency value. Our resonant models provided two methods to improve the bandwidth for various photodetectors without any other change on the performance characteristics. © 2024 Elsevier Ltd

Keyword ：

Resonant frequency Optical communication Carrier transport delay InP-based photodiode

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[1] B. Yang and J. Chen, "Graphene/Al2O3/InGaAs-based 2 O 3/InGaAs-based nanostruc- tures for near -infrared photodetectors passivated by InP layer," Opt. Mater., , vol. 136, no. 8, Feb. 2023, Art. no. 113408, doi: 10.1016/j.optmat.2022.113408. [2] H. S. Jagani, A. Patel, C. U. Vyas, J. Gohil, and V. M. Pathak, "Self -biased and biased photo -sensitivity of tin mono-selenide (SnSe) photonic crystal photodetector under poly/monochromatic light," Opt. Mater., , vol. 141, Jul. 2023, Art. no. 113898, doi: 10.1016/j.optmat.2023.113898. [3] W. Wu et al., "High-speed carbon nanotube photodetectors for 2 mu m mu m communications," ACS Nano, , vol. 17, no. 15, pp. 15155-15164, Jul. 2023, doi: 10.1021/acsnano.3c04619. [4] K. Bertilsson, E. Dubaric, G. Thungstr & ouml;m, H. -E. Nilsson, and C. S. Petersson, "Simulation of a low atmospheric -noise modified four quadrant position sensitive detector," Nucl. Instrum. Methods Phys. Res. A, Accel. Spectrom. Detect. Assoc. Equip., , vol. 466, no. 1, pp. 183-187, Jun. 2001, doi: 10.1016/s0168-9002(01)00843-9. [5] H. Safi, A. Dargahi, and J. Cheng, "Beam tracking for UAV- assisted FSO links with a four -quadrant detector," IEEE Com- mun. Lett., , vol. 25, no. 12, pp. 3908-3912, Dec. 2021, doi: 10.1109/LCOMM.2021.3113699. [6] X. Tao, L. Haibao, and L. Wusheng, "A robust photoelectric angular position sensor especially for a steerable underground boring tool," Sens. Actuators A, Phys., , vol. 120, no. 2, pp. 311-316, May 2005, doi: 10.1016/j.sna.2004.11.036. [7] C. Fu et al., "A simple -structured perovskite wavelength sensor for full color imaging application," Nano Lett., , vol. 23, no. 2, pp. 533-540, Jan. 2023, doi: 10.1021/acs.nanolett.2c03932. [8] Y. -J. Choi et al., "Demonstrating a filter -free wavelength sensor with double -well structure and its application," Biosensors, , vol. 12, no. 11, p. 1033, Nov. 2022, doi: 10.3390/bios12111033. [9] S. G. Muttlak, I. Kostakis, O. S. Abdulwahid, J. Sexton, and M. Missous, "Low-cost InP-InGaAs PIN-HBT-based OEIC for up to 20 Gb/s optical communication systems," IET Optoelectron., , vol. 13, no. 3, pp. 144-150, Jun. 2019, doi: 10.1049/iet-opt.2018.5032. [10] C. C. Chang and C. H. Lee, "Study and fabrication of PIN photodiode by using ZnSe/PS/Si structure," IEEE Trans. Electron Devices, , vol. 47, no. 1, pp. 50-54, Jan. 2000, doi: 10.1109/16.817566. [11] F. Sharafi, A. A. Orouji, and M. Soroosh, "A novel field effect photodiode to control the output photocurrent and fast optical switch- ing," Opt. Quantum Electron., , vol. 54, no. 3, p. 14, Mar. 2022, doi: 10.1007/s11082-022-03573-3. [12] Y. Zhao and S. He, "The experimental investigation on dark current for InGaAs-InP avalanche photodiodes," Microelectron. Eng., , vol. 98, pp. 19-23, Oct. 2012, doi: 10.1016/j.mee.2012.06.001. [13] Q. Y. Zeng, W. J. Wang, W. D. Hu, N. Li, and W. Lu, "Numerical analysis of multiplication layer on dark current for InGaAs/InP single photon avalanche diodes," Opt. Quantum Electron., , vol. 46, no. 10, pp. 1203-1208, Oct. 2014, doi: 10.1007/s11082-013-9809-7. [14] S. Ke, Z. Chen, J. Zhou, J. Jiao, X. Chen, and S. Chen, "Theoretical prediction of high-performance room -temperature InGaAs/Si single photon avalanche diode fabricated by semiconductor interlayer bonding," IEEE Trans. Electron Devices, , vol. 68, no. 4, pp. 1694-1701, Apr. 2021, doi: 10.1109/TED.2021.3058598. [15] Y. Sha et al., "High -efficiency SiGe/Si heterojunction phototransistor with Photon- trapping nanoholes operating at 600-1000-nm wave- length," IEEE Trans. Electron Devices, , vol. 69, no. 5, pp. 2514-2520, May 2022, doi: 10.1109/TED.2022.3162801.

Keyword ：

Voltage measurement Light detection SiGe/Si heterojunction phototransistors (HPTs) specific detectivity Optical sensors Optical device fabrication Absorption responsivity Silicon germanium Turning Sensitivity Photoconductivity Dark current Noise

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本发明提供了一种具有本征层结构的InGaAs/InP光敏晶体管红外探测器。该探测器衬底材料为InP，从衬底往上依次为：InP缓冲层、In0.53Ga0.47As集电区、In0.53Ga0.47As本征层、In0.53Ga0.47As基区、InP发射区、InP帽层、In0.53Ga0.47As欧姆接触层。集电极在In0.53Ga0.47As集电区台面上；基极和基区光窗口在In0.53Ga0.47As基区台面上；发射极在In0.53Ga0.47As欧姆接触层上。本发明的基区和集电区之间存在In0.53Ga0.47As本征层，在集电极偏置为2V时完全耗尽，大大增加了集电结耗尽层的厚度，使大部分进入探测器的入射光被集电结耗尽层吸收。在集电结耗尽层产生的光生电子‑空穴对被其中的强电场分离，从而产生光生电流。因此，本发明具有比无本征层探测器更高的量子效率和光生电流。

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利用MOCVD在InP衬底上制备InP/In0.53 Ga0.47As/InP双异质结PIN型材料,通过对本征层In0.53Ga0.47As材料的光致荧光谱研究,发现PIN结构中两侧InP材料的掺杂特性对中间In0.53Ga0.47As材料的光致发光特性有明显的影响.本文通过对两侧InP材料的变掺杂处理,实现了In0.53Ga0.47As材料光致发光特性的有效提高.

Keyword ：

变掺杂 MOCVD InGaAs InP

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It was very different between the etching rate of large patterns and narrow grooves on InGaAs/InP materials by inductively coupled plasma (ICP) technology. With the aim of high etching rate, good morphology, smooth interfaces and fewer defects, the etching mechanisms of ICP via changing gas flow rate, chamber pressure and RF power have been analyzed. Some recipes have been found to achieve a narrow stripe and deep groove with good uniformity, interface and morphology via high etching rate and good selectivity. The different phenomena during etching the large patterns and narrow grooves have been explained and the sets of parameters have been summarized that is adapted to the array device on InGaAs/InP materials during the ICP process.

Keyword ：

arrays ICP InGaAs/InP

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Abstract ：

基区渐变的单向载流子传输的双异质结光敏晶体管探测器属于半导体光电子技术领域，是一种可同时实现高响应度、高截止频率的光敏晶体管(UTC-DHPT)探测器。本发明包括：一InP衬底，利用金属有机化合物化学气相沉积(MOCVD)方法在InP衬底上依次制备出InP缓冲层、InGaAsP次集电区、InGaAsP集电区、两层不同材料带隙波长的InGaAsP过渡层、材料带隙波长渐变的InGaAsP基区、InP发射区、InP盖层、InGaAs欧姆接触层；一发射极，采用溅射的方法制作在InGaAs欧姆接触层上；一基极，采用溅射的方法制作在InGaAsP基区之上；一集电极，采用蒸镀的方法制作在InP衬底上。

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研究了InGaAs/InP PIN探测器中扩散结深对光响应度的影响,对不同扩散条件下的光电探测器进行了对比实验,测量了不同结深下器件的Ⅰ-Ⅴ特性和光响应度.结果表明:扩散结深对器件的Ⅰ-Ⅴ特性影响不大,而对光响应度影响很大,当结深处在InGaAs吸收层上表面时,光响应度最大值出现在波长1.55um处;而当结深进入衬底InP层后,光响应度最大值则出现在波长1um处.另外,在闭管扩散实验中,严格控制温度和扩散时间是控制结深的关键,研究了不同扩散温度和扩散时间下的结深,为器件的制备提供了参考.

Keyword ：

结深 探测器 光响应度 InGaAs/InP

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对于正面光入射的InP/InGaAs探测器,入射光会在空气、增透膜、InP盖层和InGaAs层之间发生多次反射.为了研究其对光响应度的影响,我们测量发现:探测器的光响应度会随探测波长出现非平坦的峰谷曲线,并且通过对该曲线上峰谷波长的简单数学处理,可以提取出已封装器件的结构参数和材料参数,而且这些参数与实验曲线符合得很好.利用该方法可以简单方便地提取出已封装器件的实际结构参数和材料参数.

Keyword ：

探测器 光响应度 拟合 多层反射

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分析了影响探测器响应度的各因素,在此基础上设计了InGaAs/InP PIN探测器的外延材料结构并优化了增透膜厚度和p-InP区欧姆接触电极图形的设计,以达到提高响应度的目的。采用MOCVD技术和闭管扩散等工艺制备了器件并测量了其响应度。结果显示,器件的光谱响应范围为1000~1600nm,在1500nm激光的辐照下,5V反向偏压时器件的响应度可达0.95A/W以上。

Keyword ：

光响应度 铟镓砷/磷化铟 探测器

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