The　synthesis　of　gallium　nitride　nanowires　(GaN　NWs)　by　plasma　enhanced　chemical　vapor　deposition　(PECVD)　are　successfully　demonstrated　in　this　work.　The　simple　and　green　synthesis　route　is　to　introduce　gallium　oxide　(Ga2O3)　and　nitrogen　(N-2)　for　the　growth　of　nanowires.　The　prepared　GaN　nanowires　have　a　single　crystalline　wurtzite　structure,　which　the　length　of　some　nanowires　is　up　to　20　mu　m,　with　a　maximum　diameter　about　140　nm.　The　morphology　and　quantity　of　the　nanowires　can　be　modulated　by　the　growth　substrate　and　process　parameters.　In　addition,　the　photoluminescence　and　field　emission　properties　of　the　prepared　GaN　nanowires　have　been　investigated,　which　were　found　to　be　largely　affected　by　their　structures.　This　work　renders　an　environmentally　benign　strategy　and　a　facile　approach　for　controllable　structures　on　nanodevice.