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Author:

Jiang, Z. N. (Jiang, Z. N..) | Zhang, F. P. (Zhang, F. P..) | Zhang, X. (Zhang, X..) | Lu, Q. M. (Lu, Q. M..) | Zhang, J. X. (Zhang, J. X..)

Indexed by:

SCIE

Abstract:

The rare earths doped Ca0.95RE0.05MnO3 (RE=Pr, Eu, Tb) oxide bulk materials are fabricated and the effects of rare earths doping within low content on the thermoelectric transport properties of the CaMnO3 oxide have been investigated. The results show that all doped oxide bulk materials are single phase with consolidated microstructure. The electrical resistivity is remarkably reduced on account of electron carrier density and mobility enhancement. The Seebeck coefficient is simultaneously reduced and the total thermal conductivity is decreased due to phonon thermal conduction confinement. The thermoelectric figure of merit ZT is improved with peak values of 0.12, 0.12 and 0.09 at 973 K for the Pr, Eu and Tb doped CaMnO3 oxide materials, respectively, which are very much higher than that of the undoped oxide material.

Keyword:

Thermoelectric properties CaMnO3 oxide Rare earth doping

Author Community:

  • [ 1 ] [Jiang, Z. N.]Guangxi Normal Univ Natl, Dept Phys & Elect Engn, Chongzuo 532200, Guangxi, Peoples R China
  • [ 2 ] [Zhang, F. P.]Henan Univ Urban Construct, Inst Phys, Henan 467036, Peoples R China
  • [ 3 ] [Zhang, F. P.]Beijing Univ Technol, Coll Mat Sci & Engn, Chinese Minist Educ, Natl Key Lab Adv Funct Mat, Beijing 100124, Peoples R China
  • [ 4 ] [Zhang, X.]Beijing Univ Technol, Coll Mat Sci & Engn, Chinese Minist Educ, Natl Key Lab Adv Funct Mat, Beijing 100124, Peoples R China
  • [ 5 ] [Lu, Q. M.]Beijing Univ Technol, Coll Mat Sci & Engn, Chinese Minist Educ, Natl Key Lab Adv Funct Mat, Beijing 100124, Peoples R China
  • [ 6 ] [Zhang, J. X.]Beijing Univ Technol, Coll Mat Sci & Engn, Chinese Minist Educ, Natl Key Lab Adv Funct Mat, Beijing 100124, Peoples R China

Reprint Author's Address:

  • [Zhang, F. P.]Henan Univ Urban Construct, Inst Phys, Henan 467036, Peoples R China

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Source :

INDIAN JOURNAL OF PURE & APPLIED PHYSICS

ISSN: 0019-5596

Year: 2015

Issue: 8

Volume: 53

Page: 530-536

0 . 7 0 0

JCR@2022

ESI Discipline: PHYSICS;

ESI HC Threshold:190

JCR Journal Grade:3

CAS Journal Grade:4

Cited Count:

WoS CC Cited Count: 4

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 7

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