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Author:

Liu, Bai (Liu, Bai.) | Li, Chong (Li, Chong.) | Liu, Qiao-Li (Liu, Qiao-Li.) | Dong, Jian (Dong, Jian.) | Guo, Chun-Wei (Guo, Chun-Wei.) | Wu, Hua (Wu, Hua.) | Zhou, Hong-Yi (Zhou, Hong-Yi.) | Fan, Xiu-Jun (Fan, Xiu-Jun.) | Guo, Xia (Guo, Xia.) | Wang, Cheng (Wang, Cheng.) | Sun, Xiao-Ming (Sun, Xiao-Ming.) | Jin, Yuan-Hao (Jin, Yuan-Hao.) | Li, Qun-Qing (Li, Qun-Qing.) | Fan, Shou-Shan (Fan, Shou-Shan.)

Indexed by:

EI Scopus SCIE

Abstract:

A hybrid film of carbon nanotubes (CNTs) and silver nanowires (AgNWs) that could be regarded as a parallel circuit of CNTs and AgNWs was developed, which exhibited a low sheet resistance of 23 Omega/sq and transmittance at 550 nm of 93%. The relatively high, intertube contact resistance of CNTs was reduced by the metallic AgNWs, which acted as bridges to aid carrier transport between CNTs. A hybrid film of CNTs and AgNWs was used as a transparent conductive layer in an AlGaInP light-emitting diode (LED). Including the hybrid film in the LED increased the optical output power by about 1.6 times and decreased the red shift of emission wavelength from 13.11 to 9.7. (C) 2015 AIP Publishing LLC.

Keyword:

Author Community:

  • [ 1 ] [Liu, Bai]Beijing Univ Technol, Photon Device Res Lab, Beijing 100124, Peoples R China
  • [ 2 ] [Li, Chong]Beijing Univ Technol, Photon Device Res Lab, Beijing 100124, Peoples R China
  • [ 3 ] [Liu, Qiao-Li]Beijing Univ Technol, Photon Device Res Lab, Beijing 100124, Peoples R China
  • [ 4 ] [Dong, Jian]Beijing Univ Technol, Photon Device Res Lab, Beijing 100124, Peoples R China
  • [ 5 ] [Guo, Chun-Wei]Beijing Univ Technol, Photon Device Res Lab, Beijing 100124, Peoples R China
  • [ 6 ] [Wu, Hua]Beijing Univ Technol, Photon Device Res Lab, Beijing 100124, Peoples R China
  • [ 7 ] [Zhou, Hong-Yi]Beijing Univ Technol, Photon Device Res Lab, Beijing 100124, Peoples R China
  • [ 8 ] [Fan, Xiu-Jun]Beijing Univ Technol, Photon Device Res Lab, Beijing 100124, Peoples R China
  • [ 9 ] [Guo, Xia]Beijing Univ Technol, Photon Device Res Lab, Beijing 100124, Peoples R China
  • [ 10 ] [Wang, Cheng]Beijing Univ Chem Technol, Beijing 100029, Peoples R China
  • [ 11 ] [Sun, Xiao-Ming]Beijing Univ Chem Technol, Beijing 100029, Peoples R China
  • [ 12 ] [Jin, Yuan-Hao]Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China
  • [ 13 ] [Li, Qun-Qing]Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China
  • [ 14 ] [Fan, Shou-Shan]Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China
  • [ 15 ] [Jin, Yuan-Hao]Tsinghua Univ, Tsinghua Foxconn Nanotechnol Res Ctr, Beijing 100084, Peoples R China
  • [ 16 ] [Li, Qun-Qing]Tsinghua Univ, Tsinghua Foxconn Nanotechnol Res Ctr, Beijing 100084, Peoples R China
  • [ 17 ] [Fan, Shou-Shan]Tsinghua Univ, Tsinghua Foxconn Nanotechnol Res Ctr, Beijing 100084, Peoples R China

Reprint Author's Address:

  • [Liu, Bai]Beijing Univ Technol, Photon Device Res Lab, Beijing 100124, Peoples R China

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Source :

APPLIED PHYSICS LETTERS

ISSN: 0003-6951

Year: 2015

Issue: 3

Volume: 106

4 . 0 0 0

JCR@2022

ESI Discipline: PHYSICS;

ESI HC Threshold:190

JCR Journal Grade:1

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count: 22

SCOPUS Cited Count: 25

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 6

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