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Author:

Zuo, Yong (Zuo, Yong.) | Ma, Limin (Ma, Limin.) | Guo, Fu (Guo, Fu.) (Scholars:郭福) | Qiao, Lei (Qiao, Lei.) | Shu, Yutian (Shu, Yutian.) | Lee, Andree (Lee, Andree.) | Subramanian, K. N. (Subramanian, K. N..)

Indexed by:

EI Scopus SCIE

Abstract:

Electromigration (EM), creep, and thermal fatigue (TF) are the most important aspects of the reliability of electronic solder joints, the failure mechanisms of which used to be investigated separately. However, current, mechanical loading, and temperature fluctuation usually co-exist under real service conditions, especially as the magnitude of current density is increasing with joint miniaturization. The importance of EM can no longer be simply ignored when analyzing the creep and TF behavior of a solder joint. The published literature reports that current density substantially changes creep rate, but the intrinsic mechanism is still unclear. Hence, the purpose of this study was to investigate the effects of EM on the creep and TF behavior of Sn58Bi solder joints by analyzing the evolution of electrical resistance and microstructure. The results indicated that EM shortens the lifetime of creep or TF of Sn58Bi solder joints. During creep, EM delays or suppresses the cracking and deforming process, so fracture occurs at the cathode interface. During TF, EM suppresses the cracking process and changes the interfacial structure.

Keyword:

Sn58Bi electromigration electrical resistance thermal fatigue creep

Author Community:

  • [ 1 ] [Zuo, Yong]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 2 ] [Zuo, Yong]Michigan State Univ, E Lansing, MI 48824 USA
  • [ 3 ] [Ma, Limin]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 4 ] [Ma, Limin]Michigan State Univ, E Lansing, MI 48824 USA
  • [ 5 ] [Guo, Fu]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 6 ] [Guo, Fu]Michigan State Univ, E Lansing, MI 48824 USA
  • [ 7 ] [Qiao, Lei]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 8 ] [Qiao, Lei]Michigan State Univ, E Lansing, MI 48824 USA
  • [ 9 ] [Shu, Yutian]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 10 ] [Shu, Yutian]Michigan State Univ, E Lansing, MI 48824 USA

Reprint Author's Address:

  • [Ma, Limin]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China

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Source :

JOURNAL OF ELECTRONIC MATERIALS

ISSN: 0361-5235

Year: 2014

Issue: 12

Volume: 43

Page: 4395-4405

2 . 1 0 0

JCR@2022

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:341

JCR Journal Grade:2

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count: 18

SCOPUS Cited Count: 19

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 4

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