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Author:

Ma Li (Ma Li.) (Scholars:李明爱) | Shen Guang-Di (Shen Guang-Di.) | Chen Yi-Xin (Chen Yi-Xin.) | Jiang Wen-Jing (Jiang Wen-Jing.) | Guo Wei-Ling (Guo Wei-Ling.) | Xu Chen (Xu Chen.) (Scholars:徐晨) | Gao Zhi-Yuan (Gao Zhi-Yuan.)

Indexed by:

SCIE PKU CSCD

Abstract:

Absorption of substrates, small angle for total reflection, and heat generated by photon blocking of electrode, all can lead to saturation and performance degradation of AlGaInP light emitting diodes(LEDs). In this paper, a novel LED composed of compound current spreading layer, compound DBR reflectors, and current blocking layer, is proposed, the saturation characteristic and lifetime are also tested. Simulation results show that there is only tiny invalid photocurrent through the electrode in the novel LEDs. Experimental results indicate that the novel LEDs have higher extraction efficiency and better saturation characteristics. Saturation current of the novel LEDs is as high as 110 mA, and the light intensity is enhanced by treble at saturation current as compared to the conventional LEDs. The accelerated aging test shows that the lifetime of the novel LEDs is as long as 17.8x10(4) hours, which means the novel LEDs have high reliability and can be used with high current.

Keyword:

saturation characteristic current blocking layer lifetime

Author Community:

  • [ 1 ] [Ma Li]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 2 ] [Shen Guang-Di]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 3 ] [Chen Yi-Xin]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 4 ] [Jiang Wen-Jing]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 5 ] [Guo Wei-Ling]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 6 ] [Xu Chen]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 7 ] [Gao Zhi-Yuan]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China

Reprint Author's Address:

  • [Shen Guang-Di]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China

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Source :

ACTA PHYSICA SINICA

ISSN: 1000-3290

Year: 2014

Issue: 3

Volume: 63

1 . 0 0 0

JCR@2022

ESI HC Threshold:202

JCR Journal Grade:3

CAS Journal Grade:4

Cited Count:

WoS CC Cited Count: 2

SCOPUS Cited Count: 2

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 8

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