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Author:

魏峰 (魏峰.) | 李立 (李立.)

Indexed by:

CQVIP

Abstract:

di/dt缓冲电路中较高的开通电感使IGBT短路特性在两种短路模式下有明显的不同,由于短路开通时集电极-发射极电压的急剧减小,IGBT短路模式一中的特性变得格外重要,而且还引起VCE变陡峭的去饱和过程。本文描述了该失效模式中IGBT特性,并给出了快速检测这种失效的两种备选方案。利用大面积高压压封IGBT模块及单IGBT芯片进行验证测试。

Keyword:

短路特性 缓冲电路 IGBT

Author Community:

  • [ 1 ] 北京工业大学电控学院

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Source :

电源世界

Year: 2013

Issue: 06

Page: 32-35

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 8

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