La2/3Sr1/3MnO3　films　with　(110)　preferred　orientation　were　deposited　on　Si　(100)　substrate　without　any　buffer　layer　by　pulsed　laser　deposition　technique.　Effect　of　oxygen　pressure　on　orientation,　surface　morphology,　and　electrical　transport　properties　were　investigated.　The　film　deposited　at　10　Pa　presented　(110)　preferred　orientation　with　the　best　crystalline　quality,　the　largest　grain　size,　and　the　smallest　roughness.　The　(110)　oriented　film　presented　higher　metal-insulator　transition　temperature,　and　the　lower　resistivity　than　that　of　the　samples　without　preferred　orientation.