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Author:

Zhang, Guangchen (Zhang, Guangchen.) | Feng, Shiwei (Feng, Shiwei.) (Scholars:冯士维) | Zhu, Hui (Zhu, Hui.) | Liu, Jing (Liu, Jing.) | Li, Jingwan (Li, Jingwan.) | Guo, Chunsheng (Guo, Chunsheng.)

Indexed by:

EI Scopus SCIE

Abstract:

The thermal fatigue delamination interface of die attach materials in high-brightness light-emitting diodes (HB LEDs) is determined using a noninvasive approach. Failure analysis of HB LEDs containing Au80Sn20 eutectic alloy and silver paste as die attach materials is performed by monitoring the changes in the partial thermal resistances in differential structure function curves of the HB LEDs through power cycling experiments. The results suggest that delamination of the Au80Sn20 eutectic and silver paste materials occurs at the chip-to-die attach interface and die attach-to-heat sink interface, respectively, which is consistent with cross-sectional scanning electron microscope analysis.

Keyword:

Light-emitting diodes (LEDs) thermal interface material structure function

Author Community:

  • [ 1 ] [Zhang, Guangchen]Beijing Univ Technol, Sch Elect Informat & Control Engn, Beijing 100124, Peoples R China
  • [ 2 ] [Feng, Shiwei]Beijing Univ Technol, Sch Elect Informat & Control Engn, Beijing 100124, Peoples R China
  • [ 3 ] [Zhu, Hui]Beijing Univ Technol, Sch Elect Informat & Control Engn, Beijing 100124, Peoples R China
  • [ 4 ] [Liu, Jing]Beijing Univ Technol, Sch Elect Informat & Control Engn, Beijing 100124, Peoples R China
  • [ 5 ] [Li, Jingwan]Beijing Univ Technol, Sch Elect Informat & Control Engn, Beijing 100124, Peoples R China
  • [ 6 ] [Guo, Chunsheng]Beijing Univ Technol, Sch Elect Informat & Control Engn, Beijing 100124, Peoples R China

Reprint Author's Address:

  • [Zhang, Guangchen]Beijing Univ Technol, Sch Elect Informat & Control Engn, Beijing 100124, Peoples R China

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Source :

IEEE PHOTONICS TECHNOLOGY LETTERS

ISSN: 1041-1135

Year: 2012

Issue: 5

Volume: 24

Page: 398-400

2 . 6 0 0

JCR@2022

ESI Discipline: PHYSICS;

JCR Journal Grade:1

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count: 8

SCOPUS Cited Count: 12

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 4

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