The　InGaZnO　thin　films　are　fabricated　on　the　quartz　glass　using　pulsed　laser　deposition　(PLD),　where　the　target　is　prepared　by　mixing　the　Ga2O3,　In2O3,　and　ZnO　powders　at　a　mol　ratio　of　1:　1:　8　before　the　solid-state　reactions　in　a　tube　furnace　at　the　atmospheric　pressure.　The　product　thin　films　were　characterized　comprehensively　by　X-ray　diffraction,　atomic　force　microscopy,　Hall-effect　investigation,　and　X-ray　photoelectron　spectroscopy.　Thus,　we　demonstrate　semiconductor　thin-film　materials　with　high　smoothness,　high　transmittance　in　visible　region,　and　excellent　electrical　properties.　(C)　2010　Optical　Society　of　America