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Author:

Huang, Yongguang (Huang, Yongguang.) | Liu, Shibing (Liu, Shibing.) (Scholars:刘世炳) | Yang, Wei (Yang, Wei.) | Yu, Chengxin (Yu, Chengxin.)

Indexed by:

EI Scopus SCIE

Abstract:

For the microfluidic chip, the surface roughness of the chamber sidewall is an important parameter in estimating its quality. In this work, the chambers of the polymethyl methacrylate (PMMA)-based microfluidic chip were fabricated by CO2 laser cutting, and then the surface roughness of the sections cut using different laser parameters and ambient temperature was studied by a non-contact 3D surface profiler. Our observation shows that the surface roughness results primarily from the residues on the laser-cut edge, which are produced by the bubbles bursting. To reduce the surface roughness of the cut section, a new approach is proposed, that is preheating the PMMA sheet to a suitable ambient temperature during laser processing. The results indicate that at a preheat temperature of 70-90 degrees C, the surface roughness resulting from the cut would be reduced. In our experiment, the best result was that the arithmetical mean roughness is R-a = 100.86 nm when the PMMA sheet was heated to 85 degrees C. (C) 2009 Elsevier B.V. All rights reserved.

Keyword:

Surface roughness CO2 laser cutting PMMA Microfluidic chip

Author Community:

  • [ 1 ] [Huang, Yongguang]Beijing Univ Technol, Inst Laser Engn, Beijing 100124, Peoples R China
  • [ 2 ] [Liu, Shibing]Beijing Univ Technol, Inst Laser Engn, Beijing 100124, Peoples R China
  • [ 3 ] [Yang, Wei]Beijing Univ Technol, Inst Laser Engn, Beijing 100124, Peoples R China
  • [ 4 ] [Yu, Chengxin]Beijing Univ Technol, Inst Laser Engn, Beijing 100124, Peoples R China

Reprint Author's Address:

  • 刘世炳

    [Liu, Shibing]Beijing Univ Technol, Inst Laser Engn, Pingleyuan 100, Beijing 100124, Peoples R China

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Source :

APPLIED SURFACE SCIENCE

ISSN: 0169-4332

Year: 2010

Issue: 6

Volume: 256

Page: 1675-1678

6 . 7 0 0

JCR@2022

ESI Discipline: MATERIALS SCIENCE;

JCR Journal Grade:2

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count: 81

SCOPUS Cited Count: 94

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 7

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