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Author:

Mi, Yilin (Mi, Yilin.) | Zhang, Ming (Zhang, Ming.) | Yan, Hui (Yan, Hui.)

Indexed by:

CPCI-S EI Scopus SCIE

Abstract:

In organic semiconductor spintronic devices, the up-spin and down-spin polarons have different density once spin injection happens from ferromagnetic electrodes into organic semiconductors. For the different spin density of two spin channels could induce different conductivity, the different conductivity between the up-spin and down-spin polarons directly dominates the spin polarization. Here the effect of spin-dependent conductivity on the spin polarization is extensively studied applying the spin drift-diffusion equation on the ferromagnetic (FM)/organic (OSE) structure. It is found that the spin dependence of the electrical conductivity is induced by the spin injection and closely related to the induced spin density (or spin accumulation) mu(down arrow) - mu(up arrow). The calculations show that the electrical conductivity induced by up-spin polarons (down-spin polarons) is position-dependent in the OSE just as the spin accumulation. And the match level of conductivities sigma(0)/sigma(f) can affect the spin-dependent conductivity at the interface of the FM/OSE to a great extent. In addition, it is found that the electric-field can affect the current spin polarization alpha(x) in the FMI/OSE system in the low-voltage regime (eV << k(B)T). (C) 2009 Elsevier B.V. All rights reserved.

Keyword:

Spin-dependent conductivity Current spin polarization Spin accumulation

Author Community:

  • [ 1 ] [Mi, Yilin]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100022, Peoples R China
  • [ 2 ] [Zhang, Ming]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100022, Peoples R China
  • [ 3 ] [Yan, Hui]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100022, Peoples R China
  • [ 4 ] [Mi, Yilin]N China Univ Technol, Coll Sci, Beijing 100041, Peoples R China

Reprint Author's Address:

  • [Zhang, Ming]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100022, Peoples R China

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Source :

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

ISSN: 0168-583X

Year: 2009

Issue: 18

Volume: 267

Page: 3274-3277

1 . 3 0 0

JCR@2022

ESI Discipline: PHYSICS;

JCR Journal Grade:1

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 5

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