The　ZnO　films　deposited　by　magnetron　sputtering　were　treated　by　H/O　plasma.　It　is　found　that　the　field　emission　(FE)　characteristics　of　the　ZnO　film　are　considerably　improved　after　H-plasma　treatment　and　slightly　deteriorated　after　O-plasma　treatment.　The　improvement　of　FE　characteristics　is　attributed　to　the　reduced　work　function　and　the　increased　conductivity　of　the　ZnO:H　films.　Conductive　atomic　force　microscopy　was　employed　to　investigate　the　effect　of　the　plasma　treatment　on　the　nanoscale　conductivity　of　ZnO,　these　findings　correlate　well　with　the　FE　data　and　facilitate　a　clearer　description　of　electron　emission　from　the　ZnO:H　films.