The　n-type　GaN　films　have　been　grown　on　c-plane　sapphire　with　different　small　misorientation(0　degrees-0.3　degrees)　by　metal-organic　chemical　vapor　deposition.　It　was　observed　by　atomic　force　microscopy　that　the　n-type　GaN　has　the　step　flow　growth　mode,　the　flow　steps　of　the　n-type　GaN　surface　are　uniformly　distribution　on　0.2　degrees　and　0.3　degrees　misorientation　sapphire　substrate,　it　was　observed　clearly　that　random　and　poor　distribution　of　the　flow　steps　was　caused　by　the　step　reconstruction　on　0　degrees　misorientation　sapphire　substrate.　The　image　quality　parameter　of　electron　back-scatter　diffraction　indicated　that　the　strains　increase　as　the　n-type　GaN　epilayer　thickness　increases　on　0　degrees　misorientation　sapphire　substrate　but　do　not　vary　obviously　on　0.2　degrees　and　0.3　degrees　misorientation　sapphire　substrates.　Electrical　and　optical　properties　demonstrated　the　n-type　GaN　grown　on　the　0.2　degrees　and　0.3　degrees　misorientation　sapphire　substrates　have　higher　electron　concentration　and　lower　ratio　of　the　intensity　of　yellow　band　to　near　band　edge.