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Author:

Zhu, Mankang (Zhu, Mankang.) | Chen, Chuan (Chen, Chuan.) | Tang, Jianlan (Tang, Jianlan.) | Hou, Yudong (Hou, Yudong.) (Scholars:侯育冬) | Wang, Hao (Wang, Hao.) | Yan, Hui (Yan, Hui.) | Zhang, Weihong (Zhang, Weihong.) | Chen, Jian (Chen, Jian.) | Zhang, Wenjun (Zhang, Wenjun.)

Indexed by:

EI Scopus SCIE

Abstract:

Relaxor ferroelectric Pb(Sc0.5Nb0.5)O-3 ceramics were synthesized by a modified solid oxide reaction method. The x-ray diffraction and Raman scattering analysis affirmed that annealing dominated the ordering degree of PSN samples. The measurements on dielectric response and ferroelectric behavior indicate the prominent impact of the ordering degree. The dielectric response of a relaxor ferroelectric is determined by the growing and freezing behaviors of the polar regions, which is correlated with the ordering degree. In addition, the behavior of the ferroelectric phase transition was controlled by the lattice distortion in ordered domain due to the displacement of Pb and ferroelectrically active Nb cations in the PSN lattice. (C) 2008 American Institute of Physics.

Keyword:

Author Community:

  • [ 1 ] [Zhu, Mankang]Beijing Univ Technol, Coll Mat, Beijing 100022, Peoples R China
  • [ 2 ] [Chen, Chuan]Beijing Univ Technol, Coll Mat, Beijing 100022, Peoples R China
  • [ 3 ] [Tang, Jianlan]Beijing Univ Technol, Coll Mat, Beijing 100022, Peoples R China
  • [ 4 ] [Hou, Yudong]Beijing Univ Technol, Coll Mat, Beijing 100022, Peoples R China
  • [ 5 ] [Wang, Hao]Beijing Univ Technol, Coll Mat, Beijing 100022, Peoples R China
  • [ 6 ] [Zhang, Weihong]Sun Yat Sen Univ, Instrumental Anal & Res Ctr, Guangzhou 510275, Guangdong, Peoples R China
  • [ 7 ] [Chen, Jian]Sun Yat Sen Univ, Instrumental Anal & Res Ctr, Guangzhou 510275, Guangdong, Peoples R China
  • [ 8 ] [Zhang, Wenjun]City Univ Hong Kong, Ctr Super Diamond & Adv Films, Dept Phys & Mat Sci, Hong Kong, Hong Kong, Peoples R China

Reprint Author's Address:

  • [Zhu, Mankang]Beijing Univ Technol, Coll Mat, Beijing 100022, Peoples R China

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Source :

JOURNAL OF APPLIED PHYSICS

ISSN: 0021-8979

Year: 2008

Issue: 8

Volume: 103

3 . 2 0 0

JCR@2022

ESI Discipline: PHYSICS;

JCR Journal Grade:1

Cited Count:

WoS CC Cited Count: 20

SCOPUS Cited Count: 20

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 7

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