Novel　transverse　micro-stack　semiconductor　laser　bars　are　put　forward　to　improve　the　output　optical　power　of　semiconductor　laser　bars　at　low　injection　current.　More　importantly,　the　novel　laser　bars　have　a　coupled　large　optical　cavity,　which　can　overcome　the　problem　of　catastrophic　optical　damage　and　improve　light　beam　quality　clue　to　the　coherently　coupled　emitting　along　the　transverse　direction.　The　micro-stack　tunnel　regeneration　tri-active　region　laser　structure　was　grown　by　metal　organic　chemical　vapour　deposition.　For　a　weakly　coupled　uncoated　device,　the　optical　power　exceeds　60　W　under　50　A　driving　current　and　the　slope　efficiency　reaches　1.55　W/A.　Further　experiments　show　that　the　perpendicular　divergence　of　23　degrees　is　achieved　from　transverse　strongly　coupled　devices.