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Abstract:
介绍了采用锗硅技术的低噪声放大器的基本理论,给出了一个2GHz低噪声放大器的例子,并总结了近来采用锗硅技术的各种频段的低噪声放大器研究情况.最后,介绍了锗硅技术的广阔应用前景.
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Source :
半导体技术
ISSN: 1003-353X
Year: 2005
Issue: 2
Volume: 30
Page: 47-50,43
Cited Count:
WoS CC Cited Count: 0
SCOPUS Cited Count:
ESI Highly Cited Papers on the List: 0 Unfold All
WanFang Cited Count: 1
Chinese Cited Count:
30 Days PV: 3
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