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Abstract：
Ground by mechanical ball milling under certain conditions, beta-Ga(2)O(3) powders can transit to epsilon-Ga(2)O(3) ones. As starting materials,Ga(2)O(3) powders treated by different methods are used to prepare GaN nanomaterials. It is found that the morphologies of GaN nanomaterials are quite different due to the phase transition of Ga(2)O(3) from beta-Ga(2)O(3) to epsilon-Ga(2)O(3).
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CHINESE PHYSICS LETTERS
ISSN： 0256-307X
Year： 2007
Issue： 8
Volume： 24
Page： 2401-2404
3 . 5 0 0
JCR@2022
ESI Discipline： PHYSICS;
JCR Journal Grade：3
Cited Count：
WoS CC Cited Count： 3
SCOPUS Cited Count：
ESI Highly Cited Papers on the List： 0 Unfold All
WanFang Cited Count：
Chinese Cited Count：
30 Days PV： 6
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