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Abstract：
The effects of plasma hydrogenation on the fabrication of nanocrystalline cubic silicon carbide (SiC) thin films on Si (100) are investigated. Our results indicate that plasma hydrogenation is an effective method to reduce the deposition temperature and to improve the composition and microstructure of the cubic SiC (beta-SiC) thin films. In particular, the crystal particle size and the oxygen diffusion can be controlled. The mechanism is discussed. (C) 2006 Elsevier B.V. All rights reserved.
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DIAMOND AND RELATED MATERIALS
ISSN： 0925-9635
Year： 2007
Issue： 4-7
Volume： 16
Page： 826-830
4 . 1 0 0
JCR@2022
ESI Discipline： MATERIALS SCIENCE;
JCR Journal Grade：1
Cited Count：
WoS CC Cited Count： 4
SCOPUS Cited Count： 5
ESI Highly Cited Papers on the List： 0 Unfold All
WanFang Cited Count：
Chinese Cited Count：
30 Days PV： 6
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