Indexed by:
Abstract:
Off-axis electron holography was used to investigate the barrier profile of the Py/AlOx/ZrOy/Py magnetic tunnel junctions with different ZrOy thicknesses. The tunneling magnetoresistance (TMR) has a strong dependence on bias voltage and the bias voltage for maximum TMR is shifted from zero. This shift increases with ZrOy barrier thickness due to the increasing barrier asymmetry in the junctions. The evolution of barrier asymmetry was directly observed by the phase change of the off-axis electron holography, which unambiguously shows the barrier profile changes from triangular to trapezoidal shape as increasing of ZrOy thickness.
Keyword:
Reprint Author's Address:
Email:
Source :
PHYSICAL REVIEW B
ISSN: 2469-9950
Year: 2007
Issue: 13
Volume: 75
3 . 7 0 0
JCR@2022
ESI Discipline: PHYSICS;
JCR Journal Grade:1
Cited Count:
WoS CC Cited Count: 8
SCOPUS Cited Count: 8
ESI Highly Cited Papers on the List: 0 Unfold All
WanFang Cited Count:
Chinese Cited Count:
30 Days PV: 4
Affiliated Colleges: