A　single　pulse　energy　6.77mJ,　repetition　rate　of　1kHz,　pulse　width　of　11ps　at　532nm　wavelength　with　the　near　top-hat　intensity　profile　in　the　near　filed　picosecond　laser　amplification　system　is　realized　using　a　semiconductor　laser　side　pumped　Nd:YAG　crystal.　The　seed　pulse　is　generated　in　a　home-built　Nd:YVO4　oscillator,　pumped　with　a　808　nm　CW　diode　laser.　The　oscillator　provides　2.8nJ,　11ps　pulse　width,　86　MHz　repetition　rate　at　1064　nm　wavelength.　Pulse　from　the　Nd:YVO4　oscillator　is　first　amplified　to　1.5mJ　by　a　diode　side-pump　Nd:YAG　regenerative　amplifier.　Then　the　pulse,　increased　in　size　by　a　negative　lens,　sequentially　passed　through　a　circular　aperture　and　a　spatial　filter-image　relaying　system　to　produce　a　top-hat　intensity　profile　in　the　modules,　and　an　8th　order　super-Gaussian　beam　is　obtained,　and　total　transmission　of　beam　shaping　set-up　is　about　30%.　The　beam,　passed　through　a　double-pass　preamplifier　of　single　rod　and　a　double-pass　main　amplifier　of　single　rod,　is　amplified　up　to　17.3mJ,　corresponding　peak　power　is　1.57　GW.　A　4F　relay-imaging　system　is　used　in　the　amplification　stages　to　preserve　the　top-hat　intensity　profile　and　compensate　the　thermally　induced　birefringence　of　Nd:YAG　rod.　The　amplified　output　beam　leaving　the　double-pass　Nd:YAG　module　is　decreased　in　size　and　imaged　on　a　5x5x13　m＜^＞3　second-harmonic　generation　(SHG)　crystal-LBO　by　a　4F　relay-imaging　system,　finally　a　532nm　approximate　top-hat　intensity　profile　in　the　near　filed,　which　single　pulse　energy　is　6.77mJ,　is　obtained　after　double-frequency.　The　second-harmonic　generation　efficiency　is　over　51%.