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Author:

Pan, Zhaoliu (Pan, Zhaoliu.) | Wang, Yiman (Wang, Yiman.) | Yang, Yunfei (Yang, Yunfei.) | Wang, Jinshu (Wang, Jinshu.) (Scholars:王金淑)

Indexed by:

CPCI-S

Abstract:

Nano-sized Scandia Doped Dispenser cathode made from Scandia doped tungsten powder has been paid worldwide attention due to its high emission and satisfactory emission uniformity. Among the adopted doping techniques the liquid-liquid doping by Sol-Gel process is the most favorable for the performance of this kind of cathode. A further searching on the details of the processes is necessary for cathode manufacturing. In this study, Sc2O3 contents of 1% wt., 3% wt., 5% wt. and 7% wt. (named Sc1, Sc3, Sc5 and Sc7) were added to the tungsten powder; their effects on microstructures and emission performance of the produced cathodes were investigated. The study proved that the nano-sized Sc2O3 particles are getting richer from Sc1 to Sc7 but cover on the W grains in all cases. While there is a slight decrease in porosities from Sc1 to Sc7, the filled impregnant of Ba Ca aluminates for Sc1 to Sc5 is satisfied the requirement for dispenser cathode, but is obviously lower for Sc7. All cathodes made from Sc3, Sc5 and Sc7 reach a Space Charge Limited current density of about 50A/cm(2) at true temperature of 960 degrees C except Sc1 of 33A/cm(2). The knee points at initial current density of 30A/cm(2) are 830 degrees C, 875 degrees C and 920 degrees C for Sc5, Sc3 and Sc7, respectively. Almost no knee can be observed for Sc1. Therefore, Sc5 and Sc3 exhibit the best emission and emission uniformity, Sc7 comes second and Sc1 goes the worst.

Keyword:

scandium oxide microstructure electron emission Sol-Gel doping process scandate cathodes

Author Community:

  • [ 1 ] [Pan, Zhaoliu]Beijing Univ Technol, Sch Mat Sci & Engn, 100 Pingleyuan, Beijing 100124, Peoples R China
  • [ 2 ] [Wang, Yiman]Beijing Univ Technol, Sch Mat Sci & Engn, 100 Pingleyuan, Beijing 100124, Peoples R China
  • [ 3 ] [Yang, Yunfei]Beijing Univ Technol, Sch Mat Sci & Engn, 100 Pingleyuan, Beijing 100124, Peoples R China
  • [ 4 ] [Wang, Jinshu]Beijing Univ Technol, Sch Mat Sci & Engn, 100 Pingleyuan, Beijing 100124, Peoples R China

Reprint Author's Address:

  • 王金淑

    [Wang, Jinshu]Beijing Univ Technol, Sch Mat Sci & Engn, 100 Pingleyuan, Beijing 100124, Peoples R China

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Source :

2018 IEEE INTERNATIONAL VACUUM ELECTRONICS CONFERENCE (IVEC)

Year: 2018

Page: 227-228

Language: English

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 7

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