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Author:

Chen, Yongjin (Chen, Yongjin.) | Zhang, Bin (Zhang, Bin.) | Ding, Qingqing (Ding, Qingqing.) | Deng, Qingsong (Deng, Qingsong.) | Cheng, Yan (Cheng, Yan.) | Song, Zhitang (Song, Zhitang.) | Li, Jixue (Li, Jixue.) | Zhang, Ze (Zhang, Ze.) | Han, Xiaodong (Han, Xiaodong.) (Scholars:韩晓东)

Indexed by:

CPCI-S EI Scopus

Abstract:

The crystallization process and crystal structure of the phase change material TiSbTe alloy have been successfully established, which is essential for applying this alloy in phase change memory. Specifically, transmission electron microscopy (TEM) analyses of the film annealed in situ were used in combination with selected-area electron diffraction (SAED) and radial distribution function (RDF) analyses to investigate the structural evolution from the amorphous phase to the polycrystalline phase. Moreover, the presence of structures with medium-range order in amorphous TST, which is beneficial to high-speed crystallization, was indicated by the structure factors S(Q)s. The crystallization temperature was determined to be approximately 170 degrees C, and the grain size varied from several to dozens of nanometers. As the temperature increased, particularly above 200 degrees C, the first single peak of the rG(r) curves transformed into double shoulder peaks due to the increasing impact of the Ti-Te bonds. In general, the majority of Ti atoms enter the SbTe lattice, whereas the remainder of the Ti atoms aggregate, leading to the appearance of TiTe2 phase separation, as confirmed by the SAED patterns, high-angle annular dark field scanning transmission electron microscopy (HAADF-STEM) images and the corresponding energy-dispersive X-ray (EDX) mappings.

Keyword:

data storage materials thin films phase transition

Author Community:

  • [ 1 ] [Chen, Yongjin]Beijing Univ Technol, Beijing Key Lab, Beijing 100124, Peoples R China
  • [ 2 ] [Zhang, Bin]Beijing Univ Technol, Beijing Key Lab, Beijing 100124, Peoples R China
  • [ 3 ] [Deng, Qingsong]Beijing Univ Technol, Beijing Key Lab, Beijing 100124, Peoples R China
  • [ 4 ] [Zhang, Ze]Beijing Univ Technol, Beijing Key Lab, Beijing 100124, Peoples R China
  • [ 5 ] [Han, Xiaodong]Beijing Univ Technol, Beijing Key Lab, Beijing 100124, Peoples R China
  • [ 6 ] [Chen, Yongjin]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing 100124, Peoples R China
  • [ 7 ] [Zhang, Bin]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing 100124, Peoples R China
  • [ 8 ] [Deng, Qingsong]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing 100124, Peoples R China
  • [ 9 ] [Zhang, Ze]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing 100124, Peoples R China
  • [ 10 ] [Han, Xiaodong]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing 100124, Peoples R China
  • [ 11 ] [Ding, Qingqing]Zhejiang Univ, Ctr Electron Microscopy, Hangzhou 310027, Zhejiang, Peoples R China
  • [ 12 ] [Li, Jixue]Zhejiang Univ, Ctr Electron Microscopy, Hangzhou 310027, Zhejiang, Peoples R China
  • [ 13 ] [Zhang, Ze]Zhejiang Univ, Ctr Electron Microscopy, Hangzhou 310027, Zhejiang, Peoples R China
  • [ 14 ] [Ding, Qingqing]Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China
  • [ 15 ] [Li, Jixue]Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China
  • [ 16 ] [Zhang, Ze]Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China
  • [ 17 ] [Cheng, Yan]Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
  • [ 18 ] [Song, Zhitang]Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China

Reprint Author's Address:

  • [Chen, Yongjin]Beijing Univ Technol, Beijing Key Lab, Beijing 100124, Peoples R China;;[Chen, Yongjin]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing 100124, Peoples R China

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Source :

2016 INTERNATIONAL WORKSHOP ON INFORMATION DATA STORAGE AND TENTH INTERNATIONAL SYMPOSIUM ON OPTICAL STORAGE

ISSN: 0277-786X

Year: 2016

Volume: 9818

Language: English

Cited Count:

WoS CC Cited Count: 1

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 8

Online/Total:587/10695607
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