SiC　rectifier　diodes　are　important　components　in　the　power　electronics　industry　because　they　have　advantages　over　conventional　silicon　diodes,　including　large　currents,　high　operation　temperatures,　and　other　similar　properties.　In　the　devices＇　current　voltage　characteristics,　it　is　readily　observable　that　the　curves　at　different　temperatures　have　a　common　cross-over　point.　We　found　that　the　temperature　dependence　of　the　ohmic　contact　resistance　may　explain　this　behavior.　To　verify　this,　we　constructed　a　simple　model,　which　demonstrated　that　this　phenomenon　is　caused　by　the　proportional　relationship　between　resistance　and　temperature.