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Author:

常新安 (常新安.) | 张克从 (张克从.) | 王希敏 (王希敏.)

Indexed by:

CSCD

Abstract:

<正> 生长四方DKDP晶体遇到的主要困难是单斜相的干扰。单斜相出现的因素主要有以下几种。(1)生长温度:当DKDP溶液含氘量一定时,四方相和单斜相的转变温度即确定。在四方相亚稳区内,生长温度比转变温度越高,亚稳相晶体能量越高,越容易发生晶变。(2)过饱和度:当过饱和度适当时,溶液处在相的亚稳区与过饱和亚稳区的重叠区域内,过饱和

Keyword:

单斜相 四方相 晶体生长

Author Community:

  • [ 1 ] 北京工业大学
  • [ 2 ] 北京工业大学 100022
  • [ 3 ] 100022

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Source :

人工晶体学报

Year: 1991

Issue: Z1

Page: 299

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 31

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