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Abstract：
The InP cap layer plays a significant role towards improving the performance of the InP/InGaAs p-i-n photodiode. However, the measurements and simulation confirm that it also induces wavelength-dependent absorption losses and a non-flat photo-responsivity curve due to the reflections from a multilayer structure.
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2004: 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, VOLS 1- 3, PROCEEDINGS
Year： 2004
Page： 2332-2334
Language： English
Cited Count：
WoS CC Cited Count： 2
SCOPUS Cited Count：
ESI Highly Cited Papers on the List： 0 Unfold All
WanFang Cited Count：
Chinese Cited Count：
30 Days PV： 5
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