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Author:

Qu, Jingjing (Qu, Jingjing.) | Zhang, Linrui (Zhang, Linrui.) | Song, Xuemei (Song, Xuemei.) | Zhang, Yongzhe (Zhang, Yongzhe.) (Scholars:张永哲) | Wang, Hao (Wang, Hao.) | Yan, Hui (Yan, Hui.) (Scholars:严辉)

Indexed by:

EI Scopus CSCD

Abstract:

Copper indium gallium selenium (CIGS) based solar cells were thin film solar cells with high conversion efficiency. The conversion efficiency of CIGS solar cells prepared in the laboratory reached 22.9%, which was close to the highest conversion efficiency of crystal silicon solar cells. At the same time, CIGS cells also had the advantages of high absorption coefficient, low manufacturing cost, and wide application. However, in large-scale commercial production, CIGS solar cells were still far from silicon-based solar cells in terms of efficiency and stability. Further improving the efficiency of CIGS solar cells, expanding the scale of cells industrialization and optimizing their performance were the only way for the future development of CIGS solar cells. The main achievements of the current development of CIGS solar cells were mainly due to people's understanding of CIGS materials and device principles. In this paper, the potential and advantages of CIGS solar cells as a hot spot and recent research progresses on CIGS solar cells were reviewed, including the improvement of buffer layer, absorption layer and window layer, as well as the treatment methods between the layers. The development of these technologies improved the conversion efficiency of CIGS solar cells and promoted its industrialization. At the same time, the related problems in the future development of cells and the solutions were discussed. © Editorial Office of Chinese Journal of Rare Metals. All right reserved.

Keyword:

Gallium compounds Silicon solar cells Thin film solar cells Buffer layers Conversion efficiency Layered semiconductors Manufacture Copper compounds Thin films Efficiency

Author Community:

  • [ 1 ] [Qu, Jingjing]Beijing Key Laboratory of Microstructure and Property of Advanced Materials, College of Materials Science and Engineering, Beijing University of Technology, Beijing; 100124, China
  • [ 2 ] [Zhang, Linrui]Beijing Key Laboratory of Microstructure and Property of Advanced Materials, College of Materials Science and Engineering, Beijing University of Technology, Beijing; 100124, China
  • [ 3 ] [Song, Xuemei]Beijing Key Laboratory of Microstructure and Property of Advanced Materials, College of Materials Science and Engineering, Beijing University of Technology, Beijing; 100124, China
  • [ 4 ] [Zhang, Yongzhe]Beijing Key Laboratory of Microstructure and Property of Advanced Materials, College of Materials Science and Engineering, Beijing University of Technology, Beijing; 100124, China
  • [ 5 ] [Wang, Hao]Beijing Key Laboratory of Microstructure and Property of Advanced Materials, College of Materials Science and Engineering, Beijing University of Technology, Beijing; 100124, China
  • [ 6 ] [Yan, Hui]Beijing Key Laboratory of Microstructure and Property of Advanced Materials, College of Materials Science and Engineering, Beijing University of Technology, Beijing; 100124, China

Reprint Author's Address:

  • 严辉

    [yan, hui]beijing key laboratory of microstructure and property of advanced materials, college of materials science and engineering, beijing university of technology, beijing; 100124, china

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Source :

Chinese Journal of Rare Metals

ISSN: 0258-7076

Year: 2020

Issue: 3

Volume: 44

Page: 313-327

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count: 8

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 2

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