In　this　paper,　a　novel　kind　of　GaN　light-emitting　diode　(LED)　with　P　and　N　discontinuous　ohmic　contact　electrodes　and　discontinuous　current　blocking　layer　(CBL)　is　designed　and　prepared.　Multiple　contact　windows　under　the　N-　and　P-electrodes　formed　by　etching　help　realize　the　discontinuous　ohmic　contacts　with　the　N-GaN　layer　and　the　ITO　layer,　respectively.　Similarly,　by　etching　a　plurality　of　discontinuous　openings　with　the　same　pitch　in　the　CBL,　a　discontinuous　CBL　structure　is　formed.　As　compared　with　traditional　structures,　the　discontinuous　ohmic　contacts　can　maximize　the　number　of　current　paths　which　allow　the　carriers　to　be　collected　from　all　four　directions,　leading　to　a　more　uniform　current　spreading　and　thermal　management.　Furthermore,　as　the　contacts　are　not　continuous　any　longer,　some　of　the　otherwise　removed　materials　(such　as　the　active　region)　lying　between　the　patches　are　saved.　The　optoelectronic　characteristics,　junction　temperature,　thermal　resistance,　and　infrared　thermography　measurements　are　conducted　and　the　current　distribution　is　simulated.　The　results　show　that　the　novel　LED　structure　has　better　optoelectronic　performances　and　current　spreading　ability　compared　to　traditional　devices.　At　150　mA　current,　the　luminous　efficiency　is　15.2%　higher　than　the　traditional　LED,　the　junction　temperature　is　reduced　by　4.9%,　and　the　thermal　resistance　is　reduced　by　12%.