Al　was　laser　doped　in　semi-insulating　4H–SiC　showing　highly　enhanced　impurity　diffusion　via　660　μm　AlCl3　aqueous　layer　by　optimization　of　maximum　power　delivered　by　KrF-Excimer　Laser　at　substrate.　Due　to　optimized　laser　fluence,　modifications　in　surface　stoichiometry　and　residual　bands　formation　were　expected　to　occur.　Irradiation　induces　p-type　carrier　concentration　up　to　1015　cm-2　having　low　surface　loss　with　no　damage　to　substrate.　Analysis　shows　c-Si　out　diffusion　at　surface　and　some　residual　a-Si　without　any　carbonization　accompanying　variety　of　complexes　formation　followed　via　irradiation　thermal　environment.　Processing　did　not　show　any　negative　impact　on　the　substrate　quality　and　defect　formation　altering　carrier　concentration　at　a　large　scale.　Minor　change　in　Raman　mode　has　been　observed　due　to　increasing　Al　doping　concentration　and　irradiation.　©　2022　Elsevier　Ltd