The　temperature　and　thermal　resistance　of　Ga2O3　Schottky　barrier　diodes　were　investigated　using　electrical　methods　with　temperature-sensitive　electrical　parameters　and　the　structure　function　method.　The　analysis　was　based　on　the　voltage　of　the　Schottky　junction　as　a　temperature-sensitive　parameter　so　as　to　measure　the　junction　temperature　of　Ga2O3　Schottky　barrier　diodes.　The　junction-case　thermal　resistance　of　the　Ga2O3　Schottky　barrier　diodes　was　accurately　extracted　by　the　transient　dual　interface　test　method　to　be　39.04　degrees　C　W-1,　which　increased　slightly　with　the　increase　of　power　current.　In　addition,　the　temperature　extracted　with　the　electrical　method　was　compared　with　the　result　of　infrared　measurements,　which　indicated　that　the　temperature　extracted　with　the　infrared　was　significantly　higher　than　the　result　of　the　electrical　method.　This　difference　can　be　explained　in　that　the　temperature　extracted　by　the　electrical　method　was　the　temperature　of　the　active　region　of　the　device,　whereas　the　result　of　infrared　presented　the　maximum　temperature　of　the　device.　Furthermore,　the　low　thermal　conductivity　of　Ga2O3　resulted　in　temperature　inhomogeneity　on　the　device　surface　and　further　increased　the　temperature　difference.　This　study　provides　a　convenient　and　non-destructive　method　for　rapid　measurement　of　the　thermal　characteristics　of　the　Ga2O3　Schottky　barrier　diodes,　and　enables　rapid　evaluation　of　the　whole　thermal　system.