Strain-compensated　quantum　wells　(QWs)　could　greatly　improve　the　performance　of　semiconductor　disk　lasers,　such　as　improving　the　epitaxy　quality　of　the　semiconductor　gain　chip　and　obtaining　a　higher　gain.　To　optimize　the　output　characteristics　of　the　semiconductor　gain　chip,　the　strain-compensated　thickness,　well　depth,　band　energy,　emission　wavelength,　and　peak　gain　versus　In　and　P　compositions　are　investigated　in　detail.　The　results　show　that　increasing　the　P　composition　of　the　strain-compensated　layer　will　slightly　reduce　the　emission　wavelength,　deepen　the　well　depth,　and　increase　the　peak　gain.　But　the　P　composition　is　not　the　higher　the　better.　When　designing　a　gain　chip,　it　should　have　a　pre-offset　between　the　emission　wavelength　of　the　QWs　at　room　temperature　and　the　target　wavelength　of　the　laser　at　an　intense　pump,　and　the　pre-offset　values　of　the　wavelength　should　be　designed　deliberately　to　guarantee　the　resonant　periodic　gain　structure　working　normally　when　the　temperature　in　the　active　region　approaches　the　desired　value.　This　theoretical　investigation　may　provide　guidance　for　optimizing　the　laser　performance　of　semiconductor　disk　lasers　and　other　QW　lasers.