The　use　of　metal　foil　catalysts　in　the　chemical　vapor　deposition　of　graphene　films　makes　graphene　transfer　an　ineluctable　part　of　graphene　device　fabrication,　which　greatly　limits　industrialization.　Here,　an　oxide　phase-change　material　(V2O5)　is　found　to　have　the　same　catalytic　effect　on　graphene　growth　as　conventional　metals.　A　uniform　large-area　graphene　film　can　be　obtained　on　a　10　nm　V2O5　film.　Density　functional　theory　is　used　to　quantitatively　analyze　the　catalytic　effect　of　V2O5.　Due　to　the　high　resistance　property　of　V2O5　at　room　temperature,　the　obtained　graphene　can　be　directly　used　in　devices　with　V2O5　as　an　intercalation　layer.　A　wafer-scale　graphene-V2O5-Si　(GVS)　Schottky　photodetector　array　is　successfully　fabricated.　When　illuminated　by　a　792　nm　laser,　the　responsivity　of　the　photodetector　can　reach　266　mA　W-1　at　0　V　bias　and　420　mA　W-1　at　2　V.　The　transfer-free　device　fabrication　process　enables　high　feasibility　for　industrialization.