The　Mn3X　(where　X　=　Ga,　Ge,　Sn,　etc.)　compounds　have　appealing　prospects　for　spintronic　applications　due　to　their　various　crystal　structures　and　magnetic　properties　for　the　design　of　reliable　high-density　memories.　However,　controlled　growth　of　high-quality　Mn3X　thin　films　remains　challenging　in　material　science.　Here,　we　reported　the　controlled　film　growth　of　Heusler　alloy　Mn3Ge,　which　could　crystallize　in　respective　tetragonal　and　hexagonal　structures.　The　tetragonal　D0(22)-type　Mn3Ge　film　exhibits　strong　perpendicular　ferromagnetic　anisotropy,　while　the　hexagonal　D0(19)-type　Mn3Ge　film　indicates　non-collinear　triangular　antiferromagnetic　order.　From　our　experimental　observations　of　structure　characterizations,　magnetic　properties,　anomalous　Hall　effect,　and　magnetoresistance　measurements,　we　realized　the　manipulation　of　spin　orientations　and　topological　features.　Majority/minority　spin　polarized　Fermi　surface　and　density　of　states　of　both　tetragonal　and　hexagonal　Mn3Ge　structures　were　investigated　by　density　functional　theory　calculations.　Our　work　not　only　opens　up　technology　routes　toward　the　development　of　Mn3X-based　devices　for　applications　in　topological　spintronics　and　spin-torque　memories　but　also　leads　to　engineer　the　physical　properties　for　fundamental　study.(c)　2021　Author(s).　All　article　content,　except　where　otherwise　noted,　is　licensed　under　a　Creative　Commons　Attribution　(CC　BY)　license(http://creativecommons.org/licenses/by/4.0/).