In　order　to　further　improve　the　luminous　efficiency　of　GaN-based　light-emitting　diodes　(LEDs),　a　novel　electrode　structure　with　an　interdigitated　electrode　and　electrode　holes　etched　under　the　P/　N　electrode　is　designed　and　fabricated,　with　the　improvement　of　the　electrode　structure　as　the　research　point.　In　this　structure,　the　metal　electrodes　are　in　direct　contact　with　the　ITO　and　the　N-GaN　layers　at　the　P/N　electrode　holes　respectively,　so　as　to　improve　the　current　spreading　capacity　and　luminous　efficiency　of　the　device.　In　order　to　obtain　better　current　blocking　layer　(CBL)　structure,　electrode　hole　size　and　electrode　hole　spacing,　seven　different　devices　are　designed,　and　their　photoelectric　properties　are　tested.　The　test　results　show　that　under　the　working　current　of　150　mA,　the　discontinuous　CBL　structure　cannot　effectively　improve　the　luminescence　performance　of　LEDs.　The　size　of　the　P　electrode　hole　has　little　effect　on　the　properties　of　the　device.　When　the　spacing　of　the　P　electrode　hole　increases　from　20　mu　m　to　30　mu　m,　the　external　quantum　efficiency　(EQE)　and　wall-plug　efficiency　(WPE)　increase　by　about　5.　0%　and　3.　8%,　respectively.　When　the　size　of　the　N　electrode　hole　reduces　from　17　mu　mx5　mu　m　to　10　mu　mx5　mu　m,　the　EQE　and　WPE　increase　by　about　6.　5%　and　3.　0%,　respectively.　When　the　spacing　of　the　N　electrode　hole　reduces　from　45　mu　m　to　40　mu　m,　the　luminescence　performance　of　the　device　is　not　effectively　improved.