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Author:

Xiaolong, Z. (Xiaolong, Z..) | Hongli, S. (Hongli, S..) | Zili, Z. (Zili, Z..) | Wimbush, S.C. (Wimbush, S.C..) | Lin, M. (Lin, M..) | Min, L. (Min, L..) | Yaotang, J. (Yaotang, J..) | Xufeng, W. (Xufeng, W..) | Mengxing, L. (Mengxing, L..) | Qiuliang, W. (Qiuliang, W..)

Indexed by:

EI Scopus SCIE

Abstract:

This study investigates crystal orientation evolution at microscopic level, and changes in the superconducting properties at macroscopic level of rare-earth-barium-copper-oxide (REBCO) superconductor tape under severe deformation. At the microscopic level, in-situ electron backscatter diffraction is used for real-time observation of the crystal orientation evolution during the entire tensile process. At the macroscopic level, the critical current (Ic) value and Ic angle dependence performance are systematically measured under different applied tensile stresses. By comparing the microscopic and macroscopic results, the synergetic evolution mechanism between them is successfully established. Stress at the initial descent point of the Ic value excellently fits the one where the (001)[100] orientation sharply decreases, thereby revealing the real Ic degradation mechanism of REBCO tapes. The application of a moderate applied tensile stress can increase the in-field Ic value and pinning force because new generated defects and strains act as pinning centers. A higher tensile stress can destroy the biaxial texture of the REBCO layer and become a significant barrier to the supercurrent flow. This research elucidates the REBCO degradation mechanism and may assist manufacturers in improving the electromechanical properties of commercial REBCO tape. © 2022

Keyword:

In-situ electron backscatter diffraction (EBSD) Tensile deformation Rare-earth-barium-copper-oxide (REBCO) Microstructure

Author Community:

  • [ 1 ] [Xiaolong Z.]College of Materials Science and Engineering, Beijing University of Technology, Key Laboratory of Advanced Functional Materials, Ministry of Education, 100 Pingleyuan, Chaoyang District, Beijing, 100124, China
  • [ 2 ] [Hongli S.]College of Materials Science and Engineering, Beijing University of Technology, Key Laboratory of Advanced Functional Materials, Ministry of Education, 100 Pingleyuan, Chaoyang District, Beijing, 100124, China
  • [ 3 ] [Zili Z.]Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing, 100190, China
  • [ 4 ] [Wimbush S.C.]Robinson Research Institute, Victoria University of Wellington, Wellington, 6140, New Zealand
  • [ 5 ] [Lin M.]College of Materials Science and Engineering, Beijing University of Technology, Key Laboratory of Advanced Functional Materials, Ministry of Education, 100 Pingleyuan, Chaoyang District, Beijing, 100124, China
  • [ 6 ] [Min L.]College of Materials Science and Engineering, Beijing University of Technology, Key Laboratory of Advanced Functional Materials, Ministry of Education, 100 Pingleyuan, Chaoyang District, Beijing, 100124, China
  • [ 7 ] [Yaotang J.]College of Materials Science and Engineering, Beijing University of Technology, Key Laboratory of Advanced Functional Materials, Ministry of Education, 100 Pingleyuan, Chaoyang District, Beijing, 100124, China
  • [ 8 ] [Xufeng W.]College of Materials Science and Engineering, Beijing University of Technology, Key Laboratory of Advanced Functional Materials, Ministry of Education, 100 Pingleyuan, Chaoyang District, Beijing, 100124, China
  • [ 9 ] [Mengxing L.]College of Materials Science and Engineering, Beijing University of Technology, Key Laboratory of Advanced Functional Materials, Ministry of Education, 100 Pingleyuan, Chaoyang District, Beijing, 100124, China
  • [ 10 ] [Qiuliang W.]Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing, 100190, China

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Source :

Acta Materialia

ISSN: 1359-6454

Year: 2023

Volume: 244

9 . 4 0 0

JCR@2022

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:26

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count: 3

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 8

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