System　in　Package　(SiP)　is　the　integration　of　IC　chips　and　a　large　number　of　passive　components　into　one　package　body.　Because　passive　components　such　as　inductors　undergo　the　same　packaging　process　as　IC　chips.　In　the　design　of　microelectronic　packages,　package　reliability　including　all　of　the　components　must　be　a　key　consideration.　The　transfer　molding　packaging　process　will　induce　stress　and　cause　package　warpage　when　the　Epoxy　Molding　Compound　(EMC)　cross-linked　and　solidified.　Therefore,　it　is　of　great　significance　to　study　transfer　molding　process　to　improve　the　reliability　of　the　package.　the　curing　reaction　of　the　EMC　was　tested　and　fitted　by　the　Differential　Scanning　Calorimetry　(DSC)and　the　curing　kinetic　model　of　the　EMC　during　the　molding　process　was　established.　Taking　the　inductive　components　as　the　research　target,　the　transfer　molding　process　of　dummy　SiP　package　is　simulated　by　using　three-dimensional　flow　simulation　software　moldex3D,　and　the　substrate　warpage　and　shear　stress　are　analyzed　according　to　the　process　parameters　such　as　material　type,　molding　temperature,　molding　pressure　and　filling　time.　The　molding　process　is　optimized　by　orthogonal　experiments　to　determine　the　primary　and　secondary　order　of　influencing　factors　and　the　optimal　process　combination.　The　results　show　that　the　main　influencing　factor　is　the　molding　temperature,　as　the　molding　temperature　increases,　the　warpage　becomes　larger;　the　filling　time　has　an　important　impact　on　the　warpage,　the　longer　the　filling　time,　the　greater　the　warpage.　　©　2022　IEEE.