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Abstract：
We obtained high n-type conductivity and low donor ionization energy for an AlN film grown on SiC by Si ion implantation. The room temperature conductivity reaches 0.26 Ω−1 cm−1, and the donor ionization energy is only 112 meV, which is the best result of Si-implanted heteroepitaxial AlN. The lattice damage caused by ion implantation can be almost completely repaired by annealing at 1330 °C for 2 h. X-ray photoelectron spectroscopy (XPS) results show few O impurity in the sample. The low donor ionization energy is attributed to avoiding the introduction of O impurities and the mitigation of self-compensating effect. These results show the great potential of Si-implanted heteroepitaxial AlN for device applications. © 2023
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Materials Science in Semiconductor Processing
ISSN： 1369-8001
Year： 2023
Volume： 160
4 . 1 0 0
JCR@2022
ESI Discipline： MATERIALS SCIENCE;
ESI HC Threshold：26
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WoS CC Cited Count： 0
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ESI Highly Cited Papers on the List： 0 Unfold All
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30 Days PV： 7
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