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Author:

Kai, Li (Kai, Li.) | Jie, Sun (Jie, Sun.) | Zai-Fa, Du (Zai-Fa, Du.) | Feng-Song, Qian (Feng-Song, Qian.) | Peng-Hao, Tang (Peng-Hao, Tang.) | Yu, Mei (Yu, Mei.) | Chen, Xu (Chen, Xu.) | Qun, Yan (Qun, Yan.) | Ming, Liu (Ming, Liu.) | Long-Fei, Li (Long-Fei, Li.) | Wei-Ling, Guo (Wei-Ling, Guo.)

Indexed by:

EI Scopus SCIE

Abstract:

Thermopile infrared detector is a kind of detector device mainly composed of thermocouple as the basicunit. Because of its simple principle, no need of cooling equipment, and other advantages, it has been widelyused in various fields of production and life. However, the absorption rates of the materials in conventionalthermopile devices are poor, and the majority of them are incompatible with microfabrication methods. In thiswork, a metal thermopile infrared detector with vertical graphene (VG) is designed and fabricated. The VG isgrown via plasma enhanced chemical vapor deposition, and retained at the device's thermal ends to provide thethermopile IR detector's wideband and high response characteristics. The detector achieves a room temperatureresponsivity reaching a value as high as 1.53 V/W at 792 nm, which can increase the response results about 28times and reduce the response time to 0.8 ms compared with the thermopile detector without VG. Aftersystematically measuring the response results, it is finally found that there are three main mechanismsresponsible for the response on the composite device. The first one is the response generated by the metalthermopile itself alone. The second one is the response increased eventually by the contribution of VG coveredat the metal thermal junction that expands the temperature difference. The last one is the response generatedby the temperature gradient existing inside the VG on the surface of the device after the absorption of heat.The portion of each partial response mechanism in the total response is also analyzed, providing a new referencedirection for analyzing the response generation mechanism of thermopile detectors with other absorbingmaterials. The process is compatible with the microfabrication, while the device performance is enhanced andsuitable for mass production. Furthermore, by utilizing the surface plasmon resonance to combine VG withmetal nanoparticles, the material' s light absorption is found to be enhanced significantly under the sameconditions, and the resulting thermal voltage can be increased to 6 times. The results indicate that VG promisesto possess practical applications, in many fields such as photoelectric sensing and power production devices.This technology provides a new method to manufacture high-performance thermopile infrared detectors andother sensor devices.

Keyword:

infrared detectors surface plasmon resonance thermopiles vertical graphene

Author Community:

  • [ 1 ] [Kai, Li]Beijing Univ Technol, Coll Microelect, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 2 ] [Zai-Fa, Du]Beijing Univ Technol, Coll Microelect, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 3 ] [Feng-Song, Qian]Beijing Univ Technol, Coll Microelect, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 4 ] [Peng-Hao, Tang]Beijing Univ Technol, Coll Microelect, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 5 ] [Yu, Mei]Beijing Univ Technol, Coll Microelect, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 6 ] [Chen, Xu]Beijing Univ Technol, Coll Microelect, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 7 ] [Ming, Liu]Beijing Univ Technol, Coll Microelect, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 8 ] [Long-Fei, Li]Beijing Univ Technol, Coll Microelect, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 9 ] [Wei-Ling, Guo]Beijing Univ Technol, Coll Microelect, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 10 ] [Jie, Sun]Fuzhou Univ, Fujian Sci & Technol Innovat Lab Optoelect Informa, Natl & Local UnitedEngineering Lab Flat Panel Disp, Fuzhou 350100, Peoples R China
  • [ 11 ] [Qun, Yan]Fuzhou Univ, Fujian Sci & Technol Innovat Lab Optoelect Informa, Natl & Local UnitedEngineering Lab Flat Panel Disp, Fuzhou 350100, Peoples R China
  • [ 12 ] [Jie, Sun]Chalmers Univ Technol, Quantum Device Phys Lab, S-41296 Gothenburg, Sweden

Reprint Author's Address:

  • [Wei-Ling, Guo]Beijing Univ Technol, Coll Microelect, Key Lab Optoelect Technol, Beijing 100124, Peoples R China;;[Jie, Sun]Fuzhou Univ, Fujian Sci & Technol Innovat Lab Optoelect Informa, Natl & Local UnitedEngineering Lab Flat Panel Disp, Fuzhou 350100, Peoples R China;;[Jie, Sun]Chalmers Univ Technol, Quantum Device Phys Lab, S-41296 Gothenburg, Sweden;;

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Source :

ACTA PHYSICA SINICA

ISSN: 1000-3290

Year: 2023

Issue: 3

Volume: 72

1 . 0 0 0

JCR@2022

ESI Discipline: PHYSICS;

ESI HC Threshold:17

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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