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Author:

Jiang, W. (Jiang, W..) | Ma, Z. (Ma, Z..) | Cao, F. (Cao, F..) | Hu, L. (Hu, L..) | Bao, L. (Bao, L..) | Chang, P. (Chang, P..) | Xu, C. (Xu, C..) | Lv, X. (Lv, X..) | Xie, Y. (Xie, Y..)

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Abstract:

The nanoplasmonic sensor of the nanograting array has a remarkable ability in label-free and rapid biological detection. The integration of the nanograting array with the standard vertical-cavity surface-emitting lasers (VCSEL) platform can achieve a compact and powerful solution to provide on-chip light sources for biosensing applications. Here, a high sensitivity and label-free integrated VCSELs sensor was developed as a suitable analysis technique for COVID-19 specific receptor binding domain (RBD) protein. The gold nanograting array is integrated on VCSELs to realize the integrated microfluidic plasmonic biosensor of on-chip biosensing. The 850 nm VCSELs are used as a light source to excite the localized surface plasmon resonance (LSPR) effect of the gold nanograting array to detect the concentration of attachments. The refractive index sensitivity of the sensor is 2.99 × 106 nW/RIU. The aptamer of RBD was modified on the surface of the gold nanograting to detect the RBD protein successfully. The biosensor has high sensitivity and a wide detection range of 0.50 ng/mL – 50 µg/mL. This VCSELs biosensor provides an integrated, portable, and miniaturized idea for biomarker detection. © 2023 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement.

Keyword:

Author Community:

  • [ 1 ] [Jiang W.]Key Laboratory of Optoelectronics Technology, Ministry of Education, Beijing University of Technology, Beijing, 100124, China
  • [ 2 ] [Ma Z.]State Key Laboratory for Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
  • [ 3 ] [Ma Z.]College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, China
  • [ 4 ] [Cao F.]Key Laboratory of Optoelectronics Technology, Ministry of Education, Beijing University of Technology, Beijing, 100124, China
  • [ 5 ] [Hu L.]Key Laboratory of Optoelectronics Technology, Ministry of Education, Beijing University of Technology, Beijing, 100124, China
  • [ 6 ] [Bao L.]Key Laboratory of Optoelectronics Technology, Ministry of Education, Beijing University of Technology, Beijing, 100124, China
  • [ 7 ] [Chang P.]Key Laboratory of Optoelectronics Technology, Ministry of Education, Beijing University of Technology, Beijing, 100124, China
  • [ 8 ] [Xu C.]Key Laboratory of Optoelectronics Technology, Ministry of Education, Beijing University of Technology, Beijing, 100124, China
  • [ 9 ] [Lv X.]State Key Laboratory for Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
  • [ 10 ] [Xie Y.]Key Laboratory of Optoelectronics Technology, Ministry of Education, Beijing University of Technology, Beijing, 100124, China

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Source :

Optics Express

ISSN: 1094-4087

Year: 2023

Issue: 8

Volume: 31

Page: 12138-12149

3 . 8 0 0

JCR@2022

ESI Discipline: PHYSICS;

ESI HC Threshold:17

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count: 5

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 4

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