In　this　paper,　a　novel　SiC　trench-gate　MOSFET　with　integrated　heterojunction　diode　(HD-TG-MOS)　is　proposed　and　studied　according　to　TCAD　simulations.　The　n-type　polysilicon/n-type　SiC　HD　is　introduced　into　the　groove　by　the　direct　contact　between　the　polysilicon　and　semiconductor.　As　a　result,　significant　improvements　of　device　performance　in　the　first　and　third　quadrants　are　observed　as　compared　to　the　conventional　SiC　trench-gate　MOSFET　(C-TG-MOS).　Better　yet,　aided　by　the　extremely　low　barrier　height　across　the　heterojunction,　the　knee　voltage　reduces　to　only　0.5　V　with　comparison　of　that　of　similar　to　2.7　V　for　the　body　diode,　when　used　for　reverse　freewheeling.　These　promotions　make　SiC　HD-TG-MOS　more　advantageous　for　HF　power　conversion　applications.　In　addition,　another　cell　architecture　variant　adopting　a　similar　concept　is　presented,　and　the　according　process　implementation　is　addressed　as　well　from　viewpoint　of　manufacture.