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Author:

Sun, L. (Sun, L..) | Jia, C. (Jia, C..) | Miao, Y. (Miao, Y..)

Indexed by:

EI Scopus SCIE

Abstract:

As the world's energy demand continues to grow and the environmental pollution problem caused by fossil energy sources becomes more and more serious, the hydrogen-electric coupling system is considered a highly competitive new energy supply method in the future. A unique Background Oriented Schlieren (BOS) technique is proposed to detect hydrogen leakage in the low and high power consumption peaks. Firstly, the principle of the BOS is analyzed, and a new inverse function of gas jet concentration distribution is proposed; secondly, a BOS optical experiment system is built, and the displacements of background particles at z = 10d, 20d and 30d at three axial positions are obtained, and the formed undesirable displacement function is corrected by laser beam profile deformation technique, and the radial concentration distribution curves at three axial positions are obtained by concentration inversion. Comparing the concentration distribution curves obtained after the correction with those obtained from CFD simulation and uncorrected BOS experiments, it was found that after the correction, the concentration distribution curves of BOS were closer to the simulation results and could reflect the radial concentration distribution of hydrogen more accurately. We also find that the average expansion angle of the hydrogen jet is about 23° for different combinations of outlet pressure and tube diameter, which is very similar to the theoretical and experimental studies. The hydrogen monitoring system based on BOS technology is a simple device with low cost, high sensitivity, fast response, and high reliability, which provides a new idea and method for hydrogen leak monitoring in a hydrogen-electric coupled system. © 2023 The Institution of Chemical Engineers

Keyword:

Safety monitoring Hydrogen-electric coupling Hydrogen leak BOS

Author Community:

  • [ 1 ] [Sun L.]School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an, 710071, China
  • [ 2 ] [Jia C.]Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing, China
  • [ 3 ] [Miao Y.]Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing, China
  • [ 4 ] [Miao Y.]Beijing Key Laboratory of Advanced Manufacturing Technology, Beijing University of Technology, Beijing, China

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Source :

Process Safety and Environmental Protection

ISSN: 0957-5820

Year: 2023

Volume: 175

Page: 437-446

7 . 8 0 0

JCR@2022

ESI Discipline: ENVIRONMENT/ECOLOGY;

ESI HC Threshold:17

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count: 12

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 9

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