Micro　LED　(light-emitting　diode)　is　maturely　used　in　the　fields　of　space　display,　medical　detection　and　visible　light　communication　due　to　its　unique　features　of　miniaturization,　low　power　consumption,　fast　response　speed　and　high　resolution.　However,　since　the　driver　circuits　are　usually　composed　of　Si　devices,　a　large　number　of　Micro　LED　pixels　must　be　transferred　from　their　GaN　substrates　to　bond　with　Si　field-effect　transistors　(FETs)　by　mass　transfer　techniques.　Since　there　are　certain　technical　bottlenecks　in　the　mass　transfer　technology　of　Micro　LED,　relevant　scholars　at　home　and　abroad　have　successively　put　forward　the　idea　of　integrating　LED　and　field　effect　transistor　driving　circuit　on　the　same　substrate,　so　as　to　avoid　the　issues　of　low　yield　and　poor　accuracy.　This　paper　summarizes　the　research　on　monolithic　integrated　active　driving　of　LEDs　and　Micro　LEDs　at　home　and　abroad　in　recent　years.　These　researches　include:　monolithic　integration　of　high　mobility　field　effect　transistors　(HEMTs)　and　LEDs,　metal　oxide　field　effect　transistors　(MOSFET)　and　LED　monolithic　integration　and　thin　film　field　effect　transistor　(TFT)　monolithic　integration　with　Micro　LED.