The　MSM　structures　based　on　high-quality　1.6　μm　in　thick　α-Ga2O3　films　grown　by　the　halide　vapor　phase　epitaxy　with　Ti/Ni　interdigital　contacts　were　developed　for　detection　of　short-wave　ultraviolet　(UVC)　radiation.　The　spectral　dependences　of　responsivity,　external　quantum　efficiency　and　detectivity　of　MSM　structures　based　on　α-Ga2O3　were　studied　in　the　wavelength　range　of　205-260　nm.　The　responsivity,　the　external　quantum　efficiency　and　the　detectivity　are　7.19×104　A×W-1,　3.79×105　arb.un.　and　1.12×1018　Hz0.5×cm×W-1,　respectively,　for　structures　with　an　interelectrode　distance　of　30　μm　at　an　applied　voltage　of　10　V　and　exposure　to　radiation　with　a　wavelength　of　235　nm.　The　high　values　of　the　photoelectric　characteristics　were　caused　by　the　manifestation　of　an　internal　gain　of　the　photoresponse　due　to　the　self-localization　of　holes　in　α-Ga2O3.　The　prospects　of　researches　to　develop　UVC　radiation　detectors　for　wireless　UVC　communication　were　shown.　IEEE