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Author:

Wang, B.-H. (Wang, B.-H..) | Xing, Y.-H. (Xing, Y.-H..) | He, W.-X. (He, W.-X..) | Guan, B.-L. (Guan, B.-L..) | Han, J. (Han, J..) | Dong, S.-Y. (Dong, S.-Y..) | Li, J.-H. (Li, J.-H..) | Fang, P.-J. (Fang, P.-J..) | Han, Z.-S. (Han, Z.-S..) | Zhang, B.-S. (Zhang, B.-S..) | Zeng, Z.-M. (Zeng, Z.-M..)

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EI Scopus SCIE

Abstract:

We reported a broadband photodetector with a spectral range of 365-965 nm,based on a SnS2/InSe vertical heterojunction. In this device,InSe serves as the optical absorption layer,effectively extending the spectral range,while SnS2 functions as the transmission layer,forming a heterojunction with InSe to facilitate separation of electron-hole pairs and enhance the responsivity. The photodetector exhibits a responsivity of 813 A/W under 365 nm. Moreover,it still maintained a high responsivity of 371 A/W,an external quantum efficiency of 1. 3 × 105%,a specific detectivity of 3. 17 × 1012 Jones,and a response time of 27 ms under 965 nm illumination. The above investigation provides a new approach for broadband photodetectors with high responsivity. © 2023 Chinese Optical Society. All rights reserved.

Keyword:

Broadband photodetectors two-dimensional material heterojunction

Author Community:

  • [ 1 ] [Wang B.-H.]Key Laboratory of Opto-Electronics Technology, Ministry of Education, College of Microelectronics, Beijing University of Technology, Beijing, 100124, China
  • [ 2 ] [Wang B.-H.]Nanofabrication Facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China
  • [ 3 ] [Xing Y.-H.]Key Laboratory of Opto-Electronics Technology, Ministry of Education, College of Microelectronics, Beijing University of Technology, Beijing, 100124, China
  • [ 4 ] [He W.-X.]Key Laboratory of Opto-Electronics Technology, Ministry of Education, College of Microelectronics, Beijing University of Technology, Beijing, 100124, China
  • [ 5 ] [He W.-X.]Nanofabrication Facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China
  • [ 6 ] [Guan B.-L.]Key Laboratory of Opto-Electronics Technology, Ministry of Education, College of Microelectronics, Beijing University of Technology, Beijing, 100124, China
  • [ 7 ] [Han J.]Key Laboratory of Opto-Electronics Technology, Ministry of Education, College of Microelectronics, Beijing University of Technology, Beijing, 100124, China
  • [ 8 ] [Dong S.-Y.]Key Laboratory of Opto-Electronics Technology, Ministry of Education, College of Microelectronics, Beijing University of Technology, Beijing, 100124, China
  • [ 9 ] [Dong S.-Y.]Nanofabrication Facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China
  • [ 10 ] [Li J.-H.]Key Laboratory of Opto-Electronics Technology, Ministry of Education, College of Microelectronics, Beijing University of Technology, Beijing, 100124, China
  • [ 11 ] [Li J.-H.]Nanofabrication Facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China
  • [ 12 ] [Fang P.-J.]Nanofabrication Facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China
  • [ 13 ] [Han Z.-S.]Key Laboratory of Opto-Electronics Technology, Ministry of Education, College of Microelectronics, Beijing University of Technology, Beijing, 100124, China
  • [ 14 ] [Zhang B.-S.]Nanofabrication Facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China
  • [ 15 ] [Zeng Z.-M.]Nanofabrication Facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China

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Source :

Journal of Infrared and Millimeter Waves

ISSN: 1001-9014

Year: 2023

Issue: 5

Volume: 42

Page: 659-665

0 . 7 0 0

JCR@2022

ESI Discipline: PHYSICS;

ESI HC Threshold:17

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count: 3

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 4

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