Enhanced　gallium　nitride　(GaN)-based　high　electron　mobility　transistor　(HEMT)　is　a　research　hotspot　in　the　field　of　high-frequency,　high-power　devices　and　switching　devices.　Thanks　to　its　simple,　controllable　and　repeatable　fabrication　process,　P-GaN　gate　technology　has　become　the　most　commonly　used　and　the　only　commercially　available　technology　for　the　fabrication　of　GaN-based　enhanced　devices.　First,　the　primary　problems　restricting　the　development　of　P-GaN　gate　structure　GaN-based　HEMT　device　were　summarized,　then　the　latest　research　progress　on　performance　optimization　was　reviewed　from　the　aspect　of　structure　and　fabrication　process.　By　analyzing　the　research　progress,　challenges　and　solutions　of　current　research　work　were　concluded.　Finally,　the　future　development　prospects　and　trends　were　prospected　briefly.　©　2023　Beijing　University　of　Technology.　All　rights　reserved.