Silicon　carbide　(SiC)-based　wide-bandgap　semiconductor　devices　such　as　metal-oxide-semiconductor　field-effect　transistors　(MOSFETs)　generate　large　amounts　of　heat　because　of　their　small　size　and　increasingly　high　power　density.　The　junction　temperature　is　the　most　important　index　for　evaluation　of　the　reliability　of　these　devices.　This　article　proposes　a　method　to　study　the　changes　in　the　forward　voltage　across　the　drain　(D)-source　(S)　junction　(VDS)　under　various　test　conditions　from　the　perspectives　of　temperature　sensitivity,　stability,　repeatability,　and　anti-interference　properties,　with　the　aim　of　determining　suitable　temperature　test　conditions　for　SiC　MOSFET　chips　to　achieve　precise　device　temperature　measurements.　The　accuracy　of　the　proposed　measurement　method　is　verified　via　comparison　with　an　infrared　thermal　imaging　method　and　an　electrical　method.　The　results　obtained　show　that　the　error　in　the　SiC　MOSFET　junction　temperature　(Tj)　measurements　when　compared　with　the　infrared　method　and　the　electrical　method　is　around　1%.　©　2023　SPIE.