Commercial　enhancement-mode　gallium　nitride　(GaN)　HEMTs　device　is　a　superior　candidate　for　high-frequency　power　electronics　applications.　However,　GaN　power　devices　have　a　unique　dynamic　RDS,　ON　problem　which　increases　the　conduction　loss　of　the　converter　during　operation.　In　this　article,　the　temperature-dependent　dynamic　RDS,　ON　at　high　frequency　is　evaluated　experimentally　for　the　first　time　using　the　double-pulse　test　(DPT)　and　multiple-pulse　test　(MPT)　techniques.　Different　temperature-dependent　dynamic　RDS,　ON　characteristics　between　the　DPT　and　the　MPT　at　high　temperatures　are　investigated.　The　significance　of　the　dynamic　RDS,ON＇s　temperature　dependence　is　important　since　GaN　devices　are　typically　operating　at　elevated　temperatures.　The　results　suggest　that　the　traditional　waferlevel　test　method　using　one　pulse　or　two　pulses　and　the　MPT　without　heating　consideration　or　at　lower　pulse　frequency　may　not　be　sufficient　to　evaluate　the　dynamic　RDS,　ON　effect.　Combined　with　high-frequency,　high-voltage,　and　high-current　stress,　high　operating　temperatures　result　in　severe　RDS,　ON　degradation;　hence,　there　is　a　diminished　return　on　operating　the　devices　at　high　temperatures.