In　this　article,　a　novel　SiC　trench　MOSFET　with　integrated　Schottky　super　barrier　rectifier　(SSBR-TMOS)　is　proposed　and　studied　by　TCAD　simulations.　The　SSBR　is　introduced　as　a　replacement　of　the　body　diode　to　improve　the　performance　of　the　device　in　the　third　quadrant.　It　contains　two　parts.　One　is　the　MOS　channel　formed　by　filling　the　alternate　groove　with　the　source　metal,　and　the　other　is　the　Schottky　contact　formed　by　the　direct　touch　between　the　source　metal　and　P-base　region　in　the　neighboring　mesa.　For　forward　conduction　operation,　the　electrons　must　overcome　the　super　barrier　created　by　the　MOS　channel　as　well　as　the　barrier　produced　by　the　Schottky　contact　before　reaching　the　source.　Therefore,　the　SSBR　shows　a　Schottky-like　characteristic　to　that　of　a　Schottky　barrier　diode　(SBD).　More　importantly,　it　possesses　stronger　high　temperature　ruggedness　than　the　latter.　Results　demonstrate　that　the　performance　of　SiC　SSBR-TMOS　in　the　first　and　third　quadrants　is　as　excellent　as　that　of　the　SiC　SBD-wall-integrated　trench　MOSFET　(SWITCH-TMOS).　Both　show　improvement　when　compared　with　that　of　the　conventional　SiC　trench　MOSFET　(C-TMOS).　Moreover,　the　short-circuit　(SC)　withstanding　time　(SCWT)　and　avalanche　energy　　$\textit{E}_{\text{AS}}$　　of　SiC　SSBR-TMOS　show　improvement　by　a　factor　of　　$\text{2}$　　and　1.1,　　$\text{7}$　　and　4.5,　respectively,　as　compared　to　those　of　the　SiC　C-TMOS　and　SWITCH-TMOS,　indicating　the　great　potential　for　high-frequency　and　harsh　environment　applications.　IEEE