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Author:

王波 (王波.) (Scholars:王波) | 高灿灿 (高灿灿.)

Indexed by:

incoPat zhihuiya

Abstract:

一种金属辅助化学刻蚀抛光硅片的方法,属于材料表面处理领域。金属辅助化学刻蚀法的基本原理就是在金属颗粒/刻蚀剂/硅中自发的进行原电池反应,其中常用的金属颗粒有Au、Ag、Pt等贵金属材料,本发明主要以Ag为例作说明。以Ag颗粒为阴极发生还原反应,硅片为阳极发生氧化反应。随着反应不断进行,完成硅片抛光。本发明采用Ag颗粒(50nm~1mm)并且在实验中加上搅拌条件,使Ag颗粒和凹凸不平的硅片一起在刻蚀剂中搅拌转动,转动过程中,硅片凸起部分接触到Ag颗粒就会被刻蚀,从而达到抛光的目的。

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Patent Info :

Type: 发明授权

Patent No.: CN201911334860.8

Filing Date: 2019-12-20

Publication Date: 2022-09-20

Pub. No.: CN111128712B

Applicants: 北京工业大学

Legal Status: 授权

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 11

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