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Abstract:
本发明公开了一种高立方织构高钨含量Ni-W合金基带的制备方法,属于高温超导涂层导体金属基带技术领域。本发明采用轧制间热处理的方法,通过改善冷轧基带形变织构,并增加冷轧基带中立方取向晶粒的含量,从而有效改善高钨含量NiW合金基带立方织构的含量,获得高立方织构含量的金属基带。本发明所制备的高钨含量NiW合金基带机械强度高,无(低)磁性,具有良好的表面质量和锐利的立方织构,可以满足进一步提高YBCO涂层导体性能的要求。
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Patent Info :
Type: 发明授权
Patent No.: CN201110377866.0
Filing Date: 2011-11-24
Publication Date: 2014-07-23
Pub. No.: CN102500638B
Applicants: 北京工业大学
Legal Status: 授权 ; 权利转移
Cited Count:
WoS CC Cited Count: 0
SCOPUS Cited Count:
ESI Highly Cited Papers on the List: 0 Unfold All
WanFang Cited Count:
Chinese Cited Count:
30 Days PV: 8
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